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| MITSUBISHI TRANSISTOR MODULES QM100TX1-H HIGH POWER SWITCHING USE INSULATED TYPE QM100TX1-H * * * * * IC Collector current ........................ 100A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 80 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, CVCF, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 68 8 10.5 B1 B3 B5 (P)+ 20 14 0 62.5 -0.2 740.25 20 14 86 B2 U B6 B4 V (N)- W 11-M4 (10) 18.5 18.5 18.5 18.5 (10) 4-5.40.1 10 800.25 94 P (+) B1 28.2Max. 24.8 26 B3 U B5 V B6 N (-) W LABEL 7 4 2 B2 B4 13 13 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100TX1-H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 100 75 350 5 750 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M4 2500 0.98~1.47 10~15 1.47~1.96 15~20 520 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M5 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V, Collector open IC=100A, IB=3A -IC=100A (diode forward voltage) IC=100A, VCE=5V Min. -- -- -- -- -- -- 80 -- VCC=300V, IC=100A, IB1=-IB2=3A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 2.0 2.7 1.7 -- 2.0 12 4.0 0.35 1.3 0.2 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100TX1-H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 IB= 2 5A 4A 3A 2A 1A 0.6A 0.4A 0.2A 10 3 7 5 3 2 10 2 7 5 3 2 10 1 23 VCE=5.0V DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) 160 120 80 DC CURRENT GAIN hFE 40 Tj=25C Tj=125C 0 0 1 2 3 4 5 5 7 10 1 23 5 7 10 2 23 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 VCE=2V 7 Tj=25C 5 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 IB=3.0A 7 Tj=25C 5 Tj=125C 3 2 10 0 7 5 3 2 10 -1 23 5 7 10 1 23 5 7 10 2 2 VBE(sat) BASE CURRENT IB (A) 3 2 10 0 7 5 3 2 10 -1 1.0 1.4 1.8 2.2 2.6 3.0 SATURATION VOLTAGE VCE(sat) BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 2 Tj=25C Tj=125C 4 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 10 1 7 5 3 2 10 0 7 5 3 2 10 -1 23 ts 3 2 IC=100A SWITCHING TIME tf ton VCC=300V IB1=IB2=3.0A Tj=25C Tj=125C 5 7 10 1 23 5 7 10 2 2 1 IC=70A 0 10 -1 2 3 5 7 10 0 23 5 7 10 1 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100TX1-H HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 2 REVERSE BIAS SAFE OPERATING AREA 200 COLLECTOR CURRENT IC (A) ts, tf (s) 10 1 7 5 3 2 10 0 7 5 3 2 10 -1 10 -1 Tj=25C Tj=125C 23 180 160 140 120 100 80 60 40 20 0 0 100 200 300 400 500 600 700 800 IB2=-3A ts SWITCHING TIME tf VCC=300V IB1=3.0A IC=100A 23 5 7 10 1 5 7 10 0 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 10ms DC 100 90 100s 1ms 50s DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) SECOND BREAKDOWN AREA DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION 10 1 7 5 TC=25C 3 NON-REPETITIVE 2 10 0 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (C) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 3 0.5 0.4 Zth (j-c) (C/ W) 0.3 10 7 5 4 3 2 10 1 7 5 4 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 2 0.2 0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 Tj=25C Tj=125C 0 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100TX1-H HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 800 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 VCC=300V 5 IB1=-IB2=1.5A Tj=25C 4 Tj=125C 3 2 10 1 7 5 4 3 2 10 0 10 0 2 3 4 5 7 10 1 10 1 Irr trr (s) Feb.1999 Qrr 10 0 trr 10 -1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 7 2.0 1.6 Zth (j-c) (C/ W) 1.2 0.8 0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) |
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